2N6661

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Mfr.Part #
2N6661
Manufacturer
Solid State Inc.
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
MOSFET N-CH 90V 900MA TO39
Stock
1,065
In Stock :
1,065

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Manufacturer :
Solid State Inc.
Product Category :
Transistors - FETs, MOSFETs - Single
Subcategory :
MOSFETs
Max Operating Temperature :
150°C
Ambient Temperature Range High :
150°C
Power Dissipation (Max) :
6.25W (Tc)
Mounting Style :
Through Hole
Threshold Voltage :
800mV
Rds On (Max) @ Id, Vgs :
4Ohm @ 1A, 10V
Transistor Polarity :
N-Channel
Polarity :
N
Drain to Source Voltage (Vdss) :
90V
Turn On Delay Time :
10 ns
RoHS Status :
Non-RoHS Compliant
Pin Count :
3
Published :
2010
Power Dissipation :
6.25W
Channel Mode :
Enhancement
Current - Continuous Drain (Id) @ 25°C :
350mA Tj
Operating Temp Range :
-55C to 150C
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 24V
Brand :
Microchip Technology / Atmel
Maximum Operating Temperature :
+150 °C
Number of Elements :
1
Power Dissipation-Max :
6.25W Tc
Drain-Source On-Volt :
90(V)
Mount :
Through Hole
Manufacturer :
Microchip
Number of Channels :
1
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Number of Pins :
3
Mounting :
Through Hole
Min Operating Temperature :
-55°C
Package :
Bag
Contact Plating :
Gold
Rad Hardened :
No
RoHS :
Details
Drain to Source Breakdown Voltage :
90V
Vgs(th) (Max) @ Id :
2V @ 1mA
Packaging :
Bulk
Product Status :
Active
Width :
9.398 Dia.mm
Drain to Source Resistance :
4Ohm
Package / Case :
TO-205AD, TO-39-3 Metal Can
Channel Type :
N
Vgs (Max) :
±20V
FET Type :
N-Channel
Continuous Drain Current :
0.35(A)
Package Type :
TO-39
Continuous Drain Current (ID) :
350mA
Input Capacitance :
50pF
Operating Temperature Classification :
Military
Type :
Power MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
6.604mm
Gate to Source Voltage (Vgs) :
20V
Transistor Type :
1 N-Channel
Number of Elements per Chip :
1
Product Category :
MOSFET
Turn-Off Delay Time :
10 ns
Minimum Operating Temperature :
-55 °C
Configuration :
Single
Product Type :
MOSFET
Element Configuration :
Single
Factory Lead Time :
14 Weeks
Rds On Max :
4 Ω
Continuous Drain Current Id :
350
Supplier Device Package :
TO-39
Gate-Source Voltage (Max) :
±20(V)
FET Feature :
--
Series :
--
Datasheets
2N6661
Introducing Transistors - FETs, MOSFETs - Single Solid State Inc. 2N6661 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-205AD, TO-39-3 Metal Can, Type:Power MOSFET, 2N6661 pinout, 2N6661 datasheet PDF, 2N6661 amp .Beyond Transistors - FETs, MOSFETs - Single Solid State Inc. 2N6661 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Solid State Inc. 2N6661


N-Channel Bulk 4Ohm @ 1A, 10V ±20V 50pF @ 24V 90V TO-205AD, TO-39-3 Metal Can

2N6661 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 50pF @ 24V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 350mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 90V, and this device has a drainage-to-source breakdown voltage of 90VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 10 ns.This device has a drain-to-source resistance of 4Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 800mV, which means that it will not activate any of its functions when its threshold voltage reaches 800mV.For this transistor to work, a voltage 90V is required between drain and source (Vdss).Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.

2N6661 Features


a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 90V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 4Ohm
a threshold voltage of 800mV
a 90V drain to source voltage (Vdss)


2N6661 Applications


There are a lot of Microchip Technology
2N6661 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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