2N6661
- Mfr.Part #
- 2N6661
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- MOSFET N-CH 90V 350MA TO39
- Stock
- 1,065
- In Stock :
- 1,065
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 4 Ω
- Mount :
- Through Hole
- Package :
- Bag
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Configuration :
- Single
- Product Category :
- MOSFET
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 350mA
- Maximum Operating Temperature :
- +150 °C
- Minimum Operating Temperature :
- -55 °C
- Drain to Source Breakdown Voltage :
- 90V
- Ambient Temperature Range High :
- 150°C
- Height :
- 6.604mm
- Product Status :
- Active
- FET Feature :
- --
- Power Dissipation (Max) :
- 6.25W (Tc)
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Max Operating Temperature :
- 150°C
- Published :
- 2010
- Supplier Device Package :
- TO-39
- Channel Mode :
- Enhancement
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1
- Width :
- 9.398 Dia.mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 24V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Type :
- Power MOSFET
- FET Type :
- N-Channel
- RoHS Status :
- Non-RoHS Compliant
- Package Type :
- TO-39
- Operating Temperature Classification :
- Military
- Current - Continuous Drain (Id) @ 25°C :
- 350mA Tj
- Series :
- --
- Mounting Style :
- Through Hole
- Power Dissipation-Max :
- 6.25W Tc
- Channel Type :
- N
- Number of Pins :
- 3
- Rad Hardened :
- No
- Number of Elements per Chip :
- 1
- Turn On Delay Time :
- 10 ns
- Gate-Source Voltage (Max) :
- ±20(V)
- Power Dissipation :
- 6.25W
- Continuous Drain Current :
- 0.35(A)
- Mounting :
- Through Hole
- Factory Lead Time :
- 14 Weeks
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- RoHS :
- Details
- Gate to Source Voltage (Vgs) :
- 20V
- Min Operating Temperature :
- -55°C
- Contact Plating :
- Gold
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 4Ohm @ 1A, 10V
- Threshold Voltage :
- 800mV
- Product Type :
- MOSFET
- Turn-Off Delay Time :
- 10 ns
- Drain-Source On-Volt :
- 90(V)
- Brand :
- Microchip Technology / Atmel
- Drain to Source Resistance :
- 4Ohm
- Input Capacitance :
- 50pF
- Continuous Drain Current Id :
- 350
- Operating Temp Range :
- -55C to 150C
- Manufacturer :
- Microchip
- Drain to Source Voltage (Vdss) :
- 90V
- Transistor Polarity :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Subcategory :
- MOSFETs
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Polarity :
- N
- Datasheets
- 2N6661
N-Channel Bulk 4Ohm @ 1A, 10V ±20V 50pF @ 24V 90V TO-205AD, TO-39-3 Metal Can
2N6661 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 50pF @ 24V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 350mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 90V, and this device has a drainage-to-source breakdown voltage of 90VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 10 ns.This device has a drain-to-source resistance of 4Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 800mV, which means that it will not activate any of its functions when its threshold voltage reaches 800mV.For this transistor to work, a voltage 90V is required between drain and source (Vdss).Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
2N6661 Features
a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 90V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 4Ohm
a threshold voltage of 800mV
a 90V drain to source voltage (Vdss)
2N6661 Applications
There are a lot of Microchip Technology
2N6661 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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