2N6661

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Mfr.Part #
2N6661
Manufacturer
Microchip Technology
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
MOSFET N-CH 90V 350MA TO39
Stock
1,065
In Stock :
1,065

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On Max :
4 Ω
Mount :
Through Hole
Package :
Bag
Pin Count :
3
Vgs (Max) :
±20V
Configuration :
Single
Product Category :
MOSFET
Number of Elements :
1
Continuous Drain Current (ID) :
350mA
Maximum Operating Temperature :
+150 °C
Minimum Operating Temperature :
-55 °C
Drain to Source Breakdown Voltage :
90V
Ambient Temperature Range High :
150°C
Height :
6.604mm
Product Status :
Active
FET Feature :
--
Power Dissipation (Max) :
6.25W (Tc)
Mounting Type :
Through Hole
Packaging :
Bulk
Max Operating Temperature :
150°C
Published :
2010
Supplier Device Package :
TO-39
Channel Mode :
Enhancement
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1
Width :
9.398 Dia.mm
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 24V
Package / Case :
TO-205AD, TO-39-3 Metal Can
Type :
Power MOSFET
FET Type :
N-Channel
RoHS Status :
Non-RoHS Compliant
Package Type :
TO-39
Operating Temperature Classification :
Military
Current - Continuous Drain (Id) @ 25°C :
350mA Tj
Series :
--
Mounting Style :
Through Hole
Power Dissipation-Max :
6.25W Tc
Channel Type :
N
Number of Pins :
3
Rad Hardened :
No
Number of Elements per Chip :
1
Turn On Delay Time :
10 ns
Gate-Source Voltage (Max) :
±20(V)
Power Dissipation :
6.25W
Continuous Drain Current :
0.35(A)
Mounting :
Through Hole
Factory Lead Time :
14 Weeks
Vgs(th) (Max) @ Id :
2V @ 1mA
RoHS :
Details
Gate to Source Voltage (Vgs) :
20V
Min Operating Temperature :
-55°C
Contact Plating :
Gold
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
4Ohm @ 1A, 10V
Threshold Voltage :
800mV
Product Type :
MOSFET
Turn-Off Delay Time :
10 ns
Drain-Source On-Volt :
90(V)
Brand :
Microchip Technology / Atmel
Drain to Source Resistance :
4Ohm
Input Capacitance :
50pF
Continuous Drain Current Id :
350
Operating Temp Range :
-55C to 150C
Manufacturer :
Microchip
Drain to Source Voltage (Vdss) :
90V
Transistor Polarity :
N-Channel
Transistor Type :
1 N-Channel
Subcategory :
MOSFETs
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Polarity :
N
Datasheets
2N6661
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology 2N6661 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1, Package / Case:TO-205AD, TO-39-3 Metal Can, Type:Power MOSFET, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, 2N6661 pinout, 2N6661 datasheet PDF, 2N6661 amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology 2N6661 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N6661


N-Channel Bulk 4Ohm @ 1A, 10V ±20V 50pF @ 24V 90V TO-205AD, TO-39-3 Metal Can

2N6661 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 50pF @ 24V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 350mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 90V, and this device has a drainage-to-source breakdown voltage of 90VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 10 ns.This device has a drain-to-source resistance of 4Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 800mV, which means that it will not activate any of its functions when its threshold voltage reaches 800mV.For this transistor to work, a voltage 90V is required between drain and source (Vdss).Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.

2N6661 Features


a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 90V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 4Ohm
a threshold voltage of 800mV
a 90V drain to source voltage (Vdss)


2N6661 Applications


There are a lot of Microchip Technology
2N6661 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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