2N6661-2

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Factory Lead Time :

26 Weeks

Power Dissipation :

725mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Element Configuration :

Single

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Resistance :

4Ohm

Operating Mode :

ENHANCEMENT MODE

Length :

9.4mm

Width :

8.15mm

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Mounting Type :

Through Hole

Number of Pins :

3

Power Dissipation-Max :

725mW Ta 6.25W Tc

Mount :

Through Hole

Contact Plating :

Lead, Tin

Terminal Position :

BOTTOM

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Additional Feature :

LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Vgs (Max) :

±20V

Published :

2014

Lead Free :

Contains Lead

Pbfree Code :

No

Drain Current-Max (Abs) (ID) :

0.86A

Package / Case :

TO-205AD, TO-39-3 Metal Can

Radiation Hardening :

No

DS Breakdown Voltage-Min :

90V

Rds On (Max) @ Id, Vgs :

4 Ω @ 1A, 10V

Vgs(th) (Max) @ Id :

2V @ 1mA

Drain to Source Voltage (Vdss) :

90V

Number of Terminations :

3

Pin Count :

2

Packaging :

Tube

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

860mA Tc

Height :

6.6mm

Case Connection :

DRAIN

Terminal Form :

Wire

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

860mA