2N6497G
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- Mfr.Part #
- 2N6497G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 250V 5A TO220
- Stock
- 41,753
- In Stock ：
- 41,753
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 5MHz
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 250V
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-220AB
- hFE Min :
- 10
- Transition Frequency :
- 5MHz
- Collector Emitter Saturation Voltage :
- 1V
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 5V
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Base Part Number :
- 2N6497
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 2A, 5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 5A
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2006
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 350V
- Voltage - Rated DC :
- 250V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 2.5A 10V
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Number of Elements :
- 1
- Max Collector Current :
- 5A
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Max Power Dissipation :
- 80W
- Datasheets
- 2N6497G
2N6497G Documents
NPN -65°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
2N6497G Overview
This device has a DC current gain of 10 @ 2.5A 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 5V @ 2A, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 5MHz.A maximum collector current of 5A volts is possible.
2N6497G Features
the DC current gain for this device is 10 @ 2.5A 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 5V @ 2A, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 5MHz
2N6497G Applications
There are a lot of ON Semiconductor
2N6497G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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