2N6491G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

REACH SVHC :

No SVHC

Published :

2006

Width :

4.82mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Emitter Base Voltage (VEBO) :

5V

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

Power Dissipation :

1.8W

Transistor Type :

PNP

Voltage - Rated DC :

-80V

Max Collector Current :

15A

Pbfree Code :

yes

Factory Lead Time :

7 Weeks

Collector Emitter Saturation Voltage :

3.5V

Max Power Dissipation :

1.8W

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Breakdown Voltage :

80V

Element Configuration :

Single

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

Length :

10.28mm

Current Rating :

15A

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Number of Terminations :

3

Transition Frequency :

5MHz

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5A 4V

Package / Case :

TO-220-3

Surface Mount :

No

Current - Collector Cutoff (Max) :

1mA

Base Part Number :

2N6491

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tube

Pin Count :

3

Collector Emitter Voltage (VCEO) :

80V

Case Connection :

COLLECTOR

Number of Pins :

3

Radiation Hardening :

No

Weight :

4.535924g

hFE Min :

20

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 5A, 15A

Height :

15.75mm

Collector Base Voltage (VCBO) :

90V

Frequency :

5MHz

Gain Bandwidth Product :

5MHz

ECCN Code :

EAR99