2N6491G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tube

Factory Lead Time :

7 Weeks

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Element Configuration :

Single

Number of Terminations :

3

JESD-609 Code :

e3

Transistor Type :

PNP

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 5A, 15A

Published :

2006

Collector Emitter Saturation Voltage :

3.5V

Transistor Application :

SWITCHING

Base Part Number :

2N6491

Radiation Hardening :

No

Case Connection :

COLLECTOR

Number of Elements :

1

Number of Pins :

3

Max Collector Current :

15A

Max Power Dissipation :

1.8W

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

4.535924g

Polarity/Channel Type :

PNP

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-65°C~150°C TJ

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Mounting Type :

Through Hole

Gain Bandwidth Product :

5MHz

Current - Collector Cutoff (Max) :

1mA

Width :

4.82mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5A 4V

Height :

15.75mm

ECCN Code :

EAR99

Voltage - Rated DC :

-80V

Collector Emitter Breakdown Voltage :

80V

Frequency :

5MHz

Current Rating :

15A

Transistor Element Material :

SILICON

Contact Plating :

Tin

hFE Min :

20

Collector Emitter Voltage (VCEO) :

80V

Transition Frequency :

5MHz

Power Dissipation :

1.8W

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

90V

Package / Case :

TO-220-3

Length :

10.28mm