2N6491
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- Mfr.Part #
- 2N6491
- Manufacturer
- Harris Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 15A TO220AB
- Stock
- 16,017
- In Stock ：
- 16,017
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Gain Bandwidth Product :
- 5MHz
- Voltage - Rated DC :
- -80V
- Transition Frequency :
- 5MHz
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 3.5V
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 5A, 15A
- Pbfree Code :
- yes
- Published :
- 2006
- Collector Base Voltage (VCBO) :
- 90V
- Surface Mount :
- No
- Max Power Dissipation :
- 1.8W
- Width :
- 4.82mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 5A 4V
- Package / Case :
- TO-220-3
- Operating Temperature :
- -65°C~150°C TJ
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Frequency :
- 5MHz
- Factory Lead Time :
- 7 Weeks
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Number of Terminations :
- 3
- Max Collector Current :
- 15A
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 80V
- Contact Plating :
- Tin
- Power Dissipation :
- 1.8W
- Element Configuration :
- Single
- Height :
- 15.75mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 20
- Weight :
- 4.535924g
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 1mA
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Base Part Number :
- 2N6491
- Length :
- 10.28mm
- Current Rating :
- 15A
- Packaging :
- Tube
- Datasheets
- 2N6491
2N6491 Documents
PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
2N6491G Overview
DC current gain in this device equals 20 @ 5A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 3.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 5A, 15A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 15A current rating.As a result, the part has a transition frequency of 5MHz.In extreme cases, the collector current can be as low as 15A volts.
2N6491G Features
the DC current gain for this device is 20 @ 5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 5A, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 5MHz
2N6491G Applications
There are a lot of ON Semiconductor
2N6491G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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