2N6491

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

2N6491

Height :

15.75mm

Frequency :

5MHz

Polarity/Channel Type :

PNP

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Transition Frequency :

5MHz

Number of Pins :

3

Packaging :

Tube

Transistor Application :

SWITCHING

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-65°C~150°C TJ

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Width :

4.82mm

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

3.5V

Mounting Type :

Through Hole

Emitter Base Voltage (VEBO) :

5V

Package / Case :

TO-220-3

Weight :

4.535924g

Gain Bandwidth Product :

5MHz

Element Configuration :

Single

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

80V

Power Dissipation :

1.8W

Published :

2006

Factory Lead Time :

7 Weeks

Pbfree Code :

yes

Number of Elements :

1

Surface Mount :

No

Pin Count :

3

Transistor Type :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5A 4V

Case Connection :

COLLECTOR

Collector Base Voltage (VCBO) :

90V

Max Power Dissipation :

1.8W

Peak Reflow Temperature (Cel) :

260

Length :

10.28mm

Collector Emitter Breakdown Voltage :

80V

Current - Collector Cutoff (Max) :

1mA

hFE Min :

20

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 5A, 15A

Contact Plating :

Tin

ECCN Code :

EAR99

Max Collector Current :

15A

Current Rating :

15A

Lead Free :

Lead Free

Voltage - Rated DC :

-80V