2N6431 PBFREE
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- Mfr.Part #
- 2N6431 PBFREE
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A TO18
- Stock
- 13,277
- In Stock ：
- 13,277
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -65°C~200°C TJ
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 30mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Packaging :
- Bulk
- JESD-609 Code :
- e3
- Factory Lead Time :
- 6 Weeks
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power - Max :
- 1.8W
- Current - Collector (Ic) (Max) :
- 100mA
- Frequency - Transition :
- 50MHz
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- 2N6431 PBFREE
NPN -65°C~200°C TJ 100nA ICBO TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N6431 PBFREE Overview
In this device, the DC current gain is 50 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.The device exhibits a collector-emitter breakdown at 300V.
2N6431 PBFREE Features
the DC current gain for this device is 50 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
2N6431 PBFREE Applications
There are a lot of Central Semiconductor Corp
2N6431 PBFREE applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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