2N6427RLRAG
- Mfr.Part #
- 2N6427RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 40V 0.5A TO92
- Stock
- 13,667
- In Stock :
- 13,667
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- NPN
- Element Configuration :
- Single
- Voltage - Rated DC :
- 40V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 500mA
- Continuous Collector Current :
- 500mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Collector Emitter Saturation Voltage :
- 1.2V
- Number of Pins :
- 3
- Surface Mount :
- No
- Number of Terminations :
- 3
- Max Power Dissipation :
- 625mW
- Max Collector Current :
- 500mA
- Collector Base Voltage (VCBO) :
- 40V
- Base Part Number :
- 2N6427
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 40V
- Qualification Status :
- Not Qualified
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN - Darlington
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500μA, 500mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Power Dissipation :
- 625mW
- Pin Count :
- 3
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e1
- Mounting Type :
- Through Hole
- Published :
- 2007
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 12V
- Current - Collector Cutoff (Max) :
- 1μA
- Contact Plating :
- Copper, Silver, Tin
- Gain Bandwidth Product :
- 150MHz
- Datasheets
- 2N6427RLRAG

NPN - Darlington -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N6427RLRAG Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.A VCE saturation (Max) of 1.5V @ 500μA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 500mA volts is possible.
2N6427RLRAG Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
2N6427RLRAG Applications
There are a lot of ON Semiconductor
2N6427RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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