2N6427RLRAG
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- Mfr.Part #
- 2N6427RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 40V 0.5A TO92
- Stock
- 13,667
- In Stock ：
- 13,667
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Number of Pins :
- 3
- Transistor Type :
- NPN - Darlington
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 40V
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- 1.2V
- Terminal Position :
- BOTTOM
- Voltage - Rated DC :
- 40V
- Max Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- 12V
- Base Part Number :
- 2N6427
- Max Collector Current :
- 500mA
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Copper, Silver, Tin
- Power Dissipation :
- 625mW
- Current Rating :
- 500mA
- Pin Count :
- 3
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 40V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Polarity :
- NPN
- Gain Bandwidth Product :
- 150MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 40V
- Published :
- 2007
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500μA, 500mA
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 1μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2N6427RLRAG
2N6427RLRAG Documents
NPN - Darlington -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N6427RLRAG Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.A VCE saturation (Max) of 1.5V @ 500μA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 500mA volts is possible.
2N6427RLRAG Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
2N6427RLRAG Applications
There are a lot of ON Semiconductor
2N6427RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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