2N6427G

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Mfr.Part #
2N6427G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN DARL 40V 0.5A TO92
Stock
31,170
In Stock :
31,170

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Time@Peak Reflow Temperature-Max (s) :
40
Power - Max :
625mW
Polarity/Channel Type :
NPN
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
JESD-609 Code :
e1
DC Current Gain (hFE) (Min) @ Ic, Vce :
20000 @ 100mA 5V
Pin Count :
3
JESD-30 Code :
O-PBCY-T3
Transistor Element Material :
SILICON
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Terminal Position :
BOTTOM
Pbfree Code :
yes
Current - Collector (Ic) (Max) :
500mA
Operating Temperature :
-55°C~150°C TJ
Voltage - Collector Emitter Breakdown (Max) :
40V
Packaging :
Bulk
Transistor Type :
NPN - Darlington
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 500μA, 500mA
Qualification Status :
COMMERCIAL
Surface Mount :
No
Peak Reflow Temperature (Cel) :
260
Terminal Finish :
TIN SILVER COPPER
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Current - Collector Cutoff (Max) :
1μA
Datasheets
2N6427G
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N6427G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, 2N6427G pinout, 2N6427G datasheet PDF, 2N6427G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N6427G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N6427G


NPN - Darlington -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

2N6427G Overview


This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 40V maximal voltage is present.

2N6427G Features


the DC current gain for this device is 20000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 500μA, 500mA


2N6427G Applications


There are a lot of Rochester Electronics, LLC
2N6427G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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