2N6426RLRAG
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- Mfr.Part #
- 2N6426RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 40V 0.5A TO92
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 500mA
- Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30000 @ 100mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 40V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 500mA
- JESD-609 Code :
- e1
- Length :
- 6.35mm
- Radiation Hardening :
- No
- Weight :
- 4.535924g
- Collector Emitter Saturation Voltage :
- 1.2V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Polarity :
- NPN
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Emitter Base Voltage (VEBO) :
- 12V
- Max Power Dissipation :
- 625mW
- Base Part Number :
- 2N6426
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500μA, 500mA
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 125MHz
- Current - Collector Cutoff (Max) :
- 1μA
- Transistor Application :
- AMPLIFIER
- Continuous Collector Current :
- 500mA
- Surface Mount :
- No
- Voltage - Rated DC :
- 40V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 150MHz
- Width :
- 6.35mm
- Height :
- 6.35mm
- Contact Plating :
- Copper, Silver, Tin
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN - Darlington
- Datasheets
- 2N6426RLRAG
NPN - Darlington -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N6426RLRAG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30000 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 500μA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 12V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 125MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2N6426RLRAG Features
the DC current gain for this device is 30000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 125MHz
2N6426RLRAG Applications
There are a lot of ON Semiconductor
2N6426RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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