2N6426RLRAG
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- Mfr.Part #
- 2N6426RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 40V 0.5A TO92
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 150MHz
- Length :
- 6.35mm
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500μA, 500mA
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 40V
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 40V
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Max Power Dissipation :
- 625mW
- Base Part Number :
- 2N6426
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Copper, Silver, Tin
- RoHS Status :
- RoHS Compliant
- Transistor Type :
- NPN - Darlington
- Max Collector Current :
- 500mA
- Emitter Base Voltage (VEBO) :
- 12V
- Collector Base Voltage (VCBO) :
- 40V
- Height :
- 6.35mm
- ECCN Code :
- EAR99
- Current Rating :
- 500mA
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 1.2V
- Continuous Collector Current :
- 500mA
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 1μA
- Polarity :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30000 @ 100mA 5V
- Voltage - Rated DC :
- 40V
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 125MHz
- Mounting Type :
- Through Hole
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Weight :
- 4.535924g
- Published :
- 2007
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Width :
- 6.35mm
- Power Dissipation :
- 625mW
- Lead Free :
- Lead Free
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Datasheets
- 2N6426RLRAG
2N6426RLRAG Documents
NPN - Darlington -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N6426RLRAG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30000 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 500μA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 12V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 125MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2N6426RLRAG Features
the DC current gain for this device is 30000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 125MHz
2N6426RLRAG Applications
There are a lot of ON Semiconductor
2N6426RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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