2N6426RLRA

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Mfr.Part #
2N6426RLRA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN DARL 40V 0.5A TO92
Stock
4,276
In Stock :
4,276

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
AMPLIFIER
Packaging :
Tape and Reel (TR)
Time@Peak Reflow Temperature-Max (s) :
30
Pin Count :
3
JESD-609 Code :
e0
Number of Elements :
1
Terminal Position :
BOTTOM
Qualification Status :
COMMERCIAL
Polarity/Channel Type :
NPN
Pbfree Code :
No
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 500μA, 500mA
Transistor Element Material :
SILICON
Terminal Finish :
TIN LEAD
DC Current Gain (hFE) (Min) @ Ic, Vce :
30000 @ 100mA 5V
Transition Frequency :
125MHz
RoHS Status :
Non-RoHS Compliant
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
No
Current - Collector (Ic) (Max) :
500mA
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector Cutoff (Max) :
1μA
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
240
JESD-30 Code :
O-PBCY-T3
Voltage - Collector Emitter Breakdown (Max) :
40V
Transistor Type :
NPN - Darlington
Power - Max :
625mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Reach Compliance Code :
Unknown
Datasheets
2N6426RLRA
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N6426RLRA from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type:Through Hole, Number of Terminations:3, 2N6426RLRA pinout, 2N6426RLRA datasheet PDF, 2N6426RLRA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N6426RLRA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N6426RLRA


NPN - Darlington -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

2N6426RLRA Overview


In this device, the DC current gain is 30000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 500μA, 500mA.125MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 40V.

2N6426RLRA Features


the DC current gain for this device is 30000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
a transition frequency of 125MHz


2N6426RLRA Applications


There are a lot of Rochester Electronics, LLC
2N6426RLRA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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