2N6426_D26Z
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- Mfr.Part #
- 2N6426_D26Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 40V 1.2A TO92-3
- Stock
- 13,689
- In Stock ：
- 13,689
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 625mW
- Current - Collector (Ic) (Max) :
- 1.2A
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500μA, 500mA
- Base Part Number :
- 2N6426
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 500mA 5V
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN - Darlington
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1μA
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Datasheets
- 2N6426_D26Z
NPN - Darlington -55°C~150°C TJ 1μA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N6426_D26Z Overview
This device has a DC current gain of 20000 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 500μA, 500mA means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 40VV - Maximum voltage.
2N6426_D26Z Features
the DC current gain for this device is 20000 @ 500mA 5V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
2N6426_D26Z Applications
There are a lot of ON Semiconductor
2N6426_D26Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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