2N5680

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Base Voltage (VCBO) :

120V

Transistor Type :

PNP

Emitter Base Voltage (VEBO) :

4V

Max Power Dissipation :

1W

Operating Temperature :

-65°C~200°C TJ

JESD-609 Code :

e0

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

120V

Transistor Element Material :

SILICON

Voltage :

120V

Polarity/Channel Type :

PNP

Terminal Position :

BOTTOM

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 250mA 2V

Terminal Form :

Wire

Max Collector Current :

1A

Terminal Finish :

TIN LEAD

Transition Frequency :

30MHz

Mounting Type :

Through Hole

Power Dissipation :

1W

Mount :

Through Hole

Pbfree Code :

No

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks

Collector Emitter Breakdown Voltage :

120V

Transistor Application :

SWITCHING

Contact Plating :

Lead, Tin

Qualification Status :

Not Qualified

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Configuration :

Single

Number of Pins :

3

Published :

2002

Package / Case :

TO-205AD, TO-39-3 Metal Can

Current - Collector Cutoff (Max) :

10μA

JEDEC-95 Code :

TO-5

Number of Terminations :

3

Current :

1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Packaging :

Bulk