2N5657
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- Mfr.Part #
- 2N5657
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A SOT32-3
- Stock
- 32,296
- In Stock ：
- 32,296
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 100mA 10V
- Contact Plating :
- Tin
- Max Collector Current :
- 500mA
- Factory Lead Time :
- 2 Weeks
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 10MHz
- Number of Terminations :
- 3
- Width :
- 6.35mm
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Mounting Type :
- Through Hole
- Base Part Number :
- 2N5657
- Pin Count :
- 3
- Voltage - Rated DC :
- 250V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 350V
- Packaging :
- Bulk
- Element Configuration :
- Single
- Height :
- 6.35mm
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 1V
- Halogen Free :
- Halogen Free
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 10V @ 100mA, 500mA
- Length :
- 31.75mm
- Frequency :
- 10MHz
- Collector Base Voltage (VCBO) :
- 375V
- Power Dissipation :
- 20W
- Weight :
- 4.535924g
- Current - Collector Cutoff (Max) :
- 100μA
- Number of Elements :
- 1
- Published :
- 2005
- Collector Emitter Voltage (VCEO) :
- 350V
- hFE Min :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 3.7A
- Operating Temperature :
- -65°C~150°C TJ
- Max Power Dissipation :
- 20W
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 10MHz
- Transistor Element Material :
- SILICON
- Datasheets
- 2N5657
NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2N5657G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 100mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 10V @ 100mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 3.7A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 10MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2N5657G Features
the DC current gain for this device is 30 @ 100mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 10V @ 100mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 3.7A
a transition frequency of 10MHz
2N5657G Applications
There are a lot of ON Semiconductor
2N5657G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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