2N5195G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

1.4V

Mounting Type :

Through Hole

Length :

7.74mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1.5A 2V

hFE Min :

20

Published :

2005

JESD-609 Code :

e3

Max Collector Current :

4A

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

80V

Time@Peak Reflow Temperature-Max (s) :

40

Width :

2.66mm

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

40W

REACH SVHC :

No SVHC

Number of Pins :

3

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

260

Surface Mount :

No

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

1.4V @ 1A, 4A

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Current - Collector Cutoff (Max) :

1mA

Lead Free :

Lead Free

Voltage - Rated DC :

-80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

2 Weeks

Collector Emitter Voltage (VCEO) :

80V

Transistor Element Material :

SILICON

Gain Bandwidth Product :

2MHz

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

80V

Base Part Number :

2N5195

Transistor Type :

PNP

Height :

11.04mm

Radiation Hardening :

No

Current Rating :

-4A

Pin Count :

3

Power Dissipation :

40W

Package / Case :

TO-225AA, TO-126-3

Emitter Base Voltage (VEBO) :

5V

Polarity/Channel Type :

PNP

Frequency :

2MHz

Transition Frequency :

2MHz

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Packaging :

Bulk

Operating Temperature :

-65°C~150°C TJ

Pbfree Code :

yes

Weight :

4.535924g