2N5195G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

40W

hFE Min :

20

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-80V

Radiation Hardening :

No

Surface Mount :

No

Transistor Element Material :

SILICON

Number of Elements :

1

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

1mA

Transistor Type :

PNP

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

80V

Weight :

4.535924g

Gain Bandwidth Product :

2MHz

JESD-609 Code :

e3

Frequency :

2MHz

Packaging :

Bulk

Operating Temperature :

-65°C~150°C TJ

Collector Base Voltage (VCBO) :

80V

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Max Power Dissipation :

40W

Package / Case :

TO-225AA, TO-126-3

Halogen Free :

Halogen Free

Collector Emitter Breakdown Voltage :

80V

Width :

2.66mm

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

PNP

Max Collector Current :

4A

Element Configuration :

Single

Height :

11.04mm

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Vce Saturation (Max) @ Ib, Ic :

1.4V @ 1A, 4A

Lead Free :

Lead Free

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1.5A 2V

Factory Lead Time :

2 Weeks

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

3

Number of Terminations :

3

Published :

2005

Pin Count :

3

Length :

7.74mm

Transition Frequency :

2MHz

Peak Reflow Temperature (Cel) :

260

Base Part Number :

2N5195

Current Rating :

-4A

Collector Emitter Saturation Voltage :

1.4V