2N5195
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- Mfr.Part #
- 2N5195
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A SOT32-3
- Stock
- 127
- In Stock ：
- 127
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Width :
- 6.35mm
- Voltage - Rated DC :
- -80V
- Number of Terminations :
- 3
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1.5A 2V
- Length :
- 25.4mm
- hFE Min :
- 20
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 1A, 4A
- Transistor Type :
- PNP
- Transition Frequency :
- 2MHz
- Polarity/Channel Type :
- PNP
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 4A
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -1.2V
- ECCN Code :
- EAR99
- Frequency :
- 2MHz
- Max Power Dissipation :
- 40W
- Current - Collector Cutoff (Max) :
- 1mA
- Gain Bandwidth Product :
- 2MHz
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 80V
- Pbfree Code :
- yes
- Base Part Number :
- 2N51
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 80V
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 80V
- Height :
- 6.35mm
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-225AA, TO-126-3
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Current Rating :
- -4A
- Power Dissipation :
- 40W
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Datasheets
- 2N5195
PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
2N5195 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1.5A 2V.With a collector emitter saturation voltage of -1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 1A, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 2MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
2N5195 Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz
2N5195 Applications
There are a lot of STMicroelectronics
2N5195 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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