2N5195
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- Mfr.Part #
- 2N5195
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A SOT32-3
- Stock
- 42,149
- In Stock ：
- 42,149
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 1A, 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -4A
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -1.2V
- Weight :
- 4.535924g
- Max Collector Current :
- 4A
- Collector Emitter Breakdown Voltage :
- 80V
- Power Dissipation :
- 40W
- Height :
- 6.35mm
- Lead Free :
- Lead Free
- hFE Min :
- 20
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1.5A 2V
- Radiation Hardening :
- No
- Package / Case :
- TO-225AA, TO-126-3
- Number of Terminations :
- 3
- Base Part Number :
- 2N51
- Pbfree Code :
- yes
- Case Connection :
- Isolated
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Length :
- 25.4mm
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 80V
- Voltage - Rated DC :
- -80V
- Max Power Dissipation :
- 40W
- Transition Frequency :
- 2MHz
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Width :
- 6.35mm
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Terminal Finish :
- Matte Tin (Sn)
- Current - Collector Cutoff (Max) :
- 1mA
- Gain Bandwidth Product :
- 2MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 80V
- Packaging :
- Tube
- Frequency :
- 2MHz
- Datasheets
- 2N5195
PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
2N5195 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1.5A 2V.With a collector emitter saturation voltage of -1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 1A, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 2MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
2N5195 Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz
2N5195 Applications
There are a lot of STMicroelectronics
2N5195 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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