2N5195
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- Mfr.Part #
- 2N5195
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP PWR GP 4A 80V TO225AA
- Stock
- 35,265
- In Stock ：
- 35,265
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 80V
- Height :
- 6.35mm
- Collector Emitter Saturation Voltage :
- -1.2V
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 1A, 4A
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 2MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Length :
- 25.4mm
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 80V
- Power Dissipation :
- 40W
- Current - Collector Cutoff (Max) :
- 1mA
- Weight :
- 4.535924g
- Current Rating :
- -4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 40W
- Base Part Number :
- 2N51
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1.5A 2V
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Type :
- PNP
- Max Collector Current :
- 4A
- Transition Frequency :
- 2MHz
- Pin Count :
- 3
- Gain Bandwidth Product :
- 2MHz
- Voltage - Rated DC :
- -80V
- Width :
- 6.35mm
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Case Connection :
- Isolated
- hFE Min :
- 20
- Polarity/Channel Type :
- PNP
- Datasheets
- 2N5195
2N5195 Documents
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PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
2N5195 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1.5A 2V.With a collector emitter saturation voltage of -1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 1A, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 2MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
2N5195 Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz
2N5195 Applications
There are a lot of STMicroelectronics
2N5195 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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