2N5195
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- Mfr.Part #
- 2N5195
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP PWR GP 4A 80V TO225AA
- Stock
- 35,265
- In Stock ：
- 35,265
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 20
- Current Rating :
- -4A
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Weight :
- 4.535924g
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 2MHz
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 2MHz
- Height :
- 6.35mm
- Max Collector Current :
- 4A
- Width :
- 6.35mm
- Max Power Dissipation :
- 40W
- Base Part Number :
- 2N51
- Current - Collector Cutoff (Max) :
- 1mA
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 1A, 4A
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Case Connection :
- Isolated
- Power Dissipation :
- 40W
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 80V
- Packaging :
- Tube
- Number of Elements :
- 1
- Number of Pins :
- 3
- Length :
- 25.4mm
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -80V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 2MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1.5A 2V
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- -1.2V
- Datasheets
- 2N5195
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PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
2N5195 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1.5A 2V.With a collector emitter saturation voltage of -1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 1A, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 2MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
2N5195 Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz
2N5195 Applications
There are a lot of STMicroelectronics
2N5195 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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