2N5195
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- Mfr.Part #
- 2N5195
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP TO126
- Stock
- 9,951
- In Stock ：
- 9,951
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -1.2V
- Packaging :
- Tube
- Power Dissipation :
- 40W
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 1A, 4A
- Max Collector Current :
- 4A
- Base Part Number :
- 2N51
- Current Rating :
- -4A
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 25.4mm
- Frequency :
- 2MHz
- Max Power Dissipation :
- 40W
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 1mA
- Radiation Hardening :
- No
- Package / Case :
- TO-225AA, TO-126-3
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Case Connection :
- Isolated
- Transistor Type :
- PNP
- Width :
- 6.35mm
- Gain Bandwidth Product :
- 2MHz
- Transition Frequency :
- 2MHz
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 20
- Number of Elements :
- 1
- Weight :
- 4.535924g
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Height :
- 6.35mm
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -80V
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1.5A 2V
- Mounting Type :
- Through Hole
- Datasheets
- 2N5195
PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
2N5195 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1.5A 2V.With a collector emitter saturation voltage of -1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 1A, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 2MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
2N5195 Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz
2N5195 Applications
There are a lot of STMicroelectronics
2N5195 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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