2N5194G

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Mfr.Part #
2N5194G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
2N5194 - POWER BIPOLAR TRANSISTO
Stock
4,114
In Stock :
4,114

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
60V
Height :
11.0998mm
Peak Reflow Temperature (Cel) :
260
Packaging :
Bulk
Transistor Application :
SWITCHING
Base Part Number :
2N5194
Surface Mount :
No
Halogen Free :
Halogen Free
Pin Count :
3
Weight :
4.535924g
Package / Case :
TO-225AA, TO-126-3
Vce Saturation (Max) @ Ib, Ic :
1.4V @ 1A, 4A
Power Dissipation :
40W
Terminal Finish :
Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Voltage (VCEO) :
60V
Transistor Type :
PNP
JESD-609 Code :
e3
Emitter Base Voltage (VEBO) :
5V
Number of Elements :
1
Frequency :
2MHz
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
1mA
Number of Terminations :
3
Pbfree Code :
yes
Operating Temperature :
-65°C~150°C TJ
Max Collector Current :
4A
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
1.4V
Current Rating :
-4A
Element Configuration :
Single
Voltage - Rated DC :
-60V
Transition Frequency :
2MHz
Number of Pins :
3
Max Power Dissipation :
40W
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 4 days ago)
Gain Bandwidth Product :
2MHz
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 1.5A 2V
Collector Base Voltage (VCBO) :
60V
Width :
2.9972mm
Published :
2000
Factory Lead Time :
2 Weeks
REACH SVHC :
No SVHC
RoHS Status :
RoHS Compliant
hFE Min :
25
Radiation Hardening :
No
Polarity/Channel Type :
PNP
Length :
7.7978mm
Datasheets
2N5194G
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N5194G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2N5194, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, 2N5194G pinout, 2N5194G datasheet PDF, 2N5194G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N5194G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N5194G


PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

2N5194G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1.5A 2V.The collector emitter saturation voltage is 1.4V, which allows for maximum design flexibility.When VCE saturation is 1.4V @ 1A, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 2MHz.A maximum collector current of 4A volts can be achieved.

2N5194G Features


the DC current gain for this device is 25 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz


2N5194G Applications


There are a lot of ON Semiconductor
2N5194G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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