2N5194G

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Mfr.Part #
2N5194G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
2N5194 - POWER BIPOLAR TRANSISTO
Stock
4,114
In Stock :
4,114

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Width :
2.9972mm
Radiation Hardening :
No
Mounting Type :
Through Hole
hFE Min :
25
REACH SVHC :
No SVHC
Number of Elements :
1
Peak Reflow Temperature (Cel) :
260
Number of Terminations :
3
Polarity/Channel Type :
PNP
Current - Collector Cutoff (Max) :
1mA
JESD-609 Code :
e3
Transition Frequency :
2MHz
Base Part Number :
2N5194
Number of Pins :
3
Surface Mount :
No
Frequency :
2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 1.5A 2V
Transistor Application :
SWITCHING
Operating Temperature :
-65°C~150°C TJ
Collector Emitter Voltage (VCEO) :
60V
Element Configuration :
Single
Emitter Base Voltage (VEBO) :
5V
RoHS Status :
RoHS Compliant
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Saturation Voltage :
1.4V
Current Rating :
-4A
Gain Bandwidth Product :
2MHz
Voltage - Rated DC :
-60V
Power Dissipation :
40W
Terminal Finish :
Tin (Sn)
Vce Saturation (Max) @ Ib, Ic :
1.4V @ 1A, 4A
Weight :
4.535924g
Pbfree Code :
yes
Published :
2000
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-225AA, TO-126-3
Max Power Dissipation :
40W
Lead Free :
Lead Free
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 4 days ago)
Halogen Free :
Halogen Free
Transistor Element Material :
SILICON
Pin Count :
3
Length :
7.7978mm
Transistor Type :
PNP
Max Collector Current :
4A
ECCN Code :
EAR99
Collector Base Voltage (VCBO) :
60V
Factory Lead Time :
2 Weeks
Collector Emitter Breakdown Voltage :
60V
Height :
11.0998mm
Packaging :
Bulk
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N5194G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Base Part Number:2N5194, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-225AA, TO-126-3, 2N5194G pinout, 2N5194G datasheet PDF, 2N5194G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N5194G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N5194G


PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

2N5194G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1.5A 2V.The collector emitter saturation voltage is 1.4V, which allows for maximum design flexibility.When VCE saturation is 1.4V @ 1A, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 2MHz.A maximum collector current of 4A volts can be achieved.

2N5194G Features


the DC current gain for this device is 25 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz


2N5194G Applications


There are a lot of ON Semiconductor
2N5194G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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