2N5194G
- Mfr.Part #
- 2N5194G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- 2N5194 - POWER BIPOLAR TRANSISTO
- Stock
- 4,114
- In Stock :
- 4,114
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 60V
- Height :
- 11.0998mm
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Base Part Number :
- 2N5194
- Surface Mount :
- No
- Halogen Free :
- Halogen Free
- Pin Count :
- 3
- Weight :
- 4.535924g
- Package / Case :
- TO-225AA, TO-126-3
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 1A, 4A
- Power Dissipation :
- 40W
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Frequency :
- 2MHz
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 1mA
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Operating Temperature :
- -65°C~150°C TJ
- Max Collector Current :
- 4A
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 1.4V
- Current Rating :
- -4A
- Element Configuration :
- Single
- Voltage - Rated DC :
- -60V
- Transition Frequency :
- 2MHz
- Number of Pins :
- 3
- Max Power Dissipation :
- 40W
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Gain Bandwidth Product :
- 2MHz
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1.5A 2V
- Collector Base Voltage (VCBO) :
- 60V
- Width :
- 2.9972mm
- Published :
- 2000
- Factory Lead Time :
- 2 Weeks
- REACH SVHC :
- No SVHC
- RoHS Status :
- RoHS Compliant
- hFE Min :
- 25
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Length :
- 7.7978mm
- Datasheets
- 2N5194G

PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
2N5194G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1.5A 2V.The collector emitter saturation voltage is 1.4V, which allows for maximum design flexibility.When VCE saturation is 1.4V @ 1A, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 2MHz.A maximum collector current of 4A volts can be achieved.
2N5194G Features
the DC current gain for this device is 25 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz
2N5194G Applications
There are a lot of ON Semiconductor
2N5194G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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