2N5194G
- Mfr.Part #
- 2N5194G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 4A TO126
- Stock
- 4,114
- In Stock :
- 4,114
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- hFE Min :
- 25
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 2.9972mm
- Number of Pins :
- 3
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Saturation Voltage :
- 1.4V
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Current - Collector Cutoff (Max) :
- 1mA
- Max Power Dissipation :
- 40W
- JESD-609 Code :
- e3
- Package / Case :
- TO-225AA, TO-126-3
- Gain Bandwidth Product :
- 2MHz
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 40W
- Height :
- 11.0998mm
- Terminal Finish :
- Tin (Sn)
- Halogen Free :
- Halogen Free
- Base Part Number :
- 2N5194
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 4A
- Frequency :
- 2MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 1A, 4A
- Weight :
- 4.535924g
- Published :
- 2000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -60V
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- -4A
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 2MHz
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Pin Count :
- 3
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~150°C TJ
- Length :
- 7.7978mm
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- RoHS Status :
- RoHS Compliant
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1.5A 2V
- Datasheets
- 2N5194G
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PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
2N5194G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1.5A 2V.The collector emitter saturation voltage is 1.4V, which allows for maximum design flexibility.When VCE saturation is 1.4V @ 1A, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 2MHz.A maximum collector current of 4A volts can be achieved.
2N5194G Features
the DC current gain for this device is 25 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz
2N5194G Applications
There are a lot of ON Semiconductor
2N5194G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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