2N5194G

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Mfr.Part #
2N5194G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 60V 4A TO126
Stock
4,114
In Stock :
4,114

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Element Configuration :
Single
hFE Min :
25
Emitter Base Voltage (VEBO) :
5V
Width :
2.9972mm
Number of Pins :
3
Factory Lead Time :
2 Weeks
Collector Emitter Saturation Voltage :
1.4V
Collector Base Voltage (VCBO) :
60V
Collector Emitter Breakdown Voltage :
60V
Collector Emitter Voltage (VCEO) :
60V
Current - Collector Cutoff (Max) :
1mA
Max Power Dissipation :
40W
JESD-609 Code :
e3
Package / Case :
TO-225AA, TO-126-3
Gain Bandwidth Product :
2MHz
Number of Elements :
1
REACH SVHC :
No SVHC
Power Dissipation :
40W
Height :
11.0998mm
Terminal Finish :
Tin (Sn)
Halogen Free :
Halogen Free
Base Part Number :
2N5194
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
260
Max Collector Current :
4A
Frequency :
2MHz
Vce Saturation (Max) @ Ib, Ic :
1.4V @ 1A, 4A
Weight :
4.535924g
Published :
2000
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Number of Terminations :
3
Voltage - Rated DC :
-60V
ECCN Code :
EAR99
Packaging :
Bulk
Time@Peak Reflow Temperature-Max (s) :
40
Current Rating :
-4A
Transistor Application :
SWITCHING
Transition Frequency :
2MHz
Mounting Type :
Through Hole
Polarity/Channel Type :
PNP
Transistor Type :
PNP
Pin Count :
3
Radiation Hardening :
No
Operating Temperature :
-65°C~150°C TJ
Length :
7.7978mm
Transistor Element Material :
SILICON
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 4 days ago)
RoHS Status :
RoHS Compliant
Surface Mount :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 1.5A 2V
Datasheets
2N5194G
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N5194G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-225AA, TO-126-3, Base Part Number:2N5194, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-65°C~150°C TJ, 2N5194G pinout, 2N5194G datasheet PDF, 2N5194G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N5194G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N5194G


PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

2N5194G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1.5A 2V.The collector emitter saturation voltage is 1.4V, which allows for maximum design flexibility.When VCE saturation is 1.4V @ 1A, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 2MHz.A maximum collector current of 4A volts can be achieved.

2N5194G Features


the DC current gain for this device is 25 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz


2N5194G Applications


There are a lot of ON Semiconductor
2N5194G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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