2N5192G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

40W

Gain Bandwidth Product :

2MHz

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

1mA

Mounting Type :

Through Hole

Factory Lead Time :

5 Weeks

Number of Pins :

3

Transistor Element Material :

SILICON

Number of Elements :

1

Radiation Hardening :

No

JESD-609 Code :

e3

Surface Mount :

No

Published :

2000

Terminal Finish :

Tin (Sn)

Collector Emitter Saturation Voltage :

1.4V

Length :

7.7978mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

11.0998mm

Base Part Number :

2N5192

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1.5A 2V

Weight :

4.535924g

Max Collector Current :

4A

Collector Base Voltage (VCBO) :

80V

Transistor Type :

NPN

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

hFE Min :

20

Emitter Base Voltage (VEBO) :

5V

Element Configuration :

Single

Halogen Free :

Halogen Free

Collector Emitter Voltage (VCEO) :

80V

Operating Temperature :

-65°C~150°C TJ

Packaging :

Bulk

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Width :

2.9972mm

Vce Saturation (Max) @ Ib, Ic :

1.4V @ 1A, 4A

Package / Case :

TO-225AA, TO-126-3

Transistor Application :

SWITCHING

Frequency :

2MHz

Current Rating :

4A

Transition Frequency :

2MHz

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Collector Emitter Breakdown Voltage :

80V

Max Power Dissipation :

40W

Voltage - Rated DC :

80V