2N5192
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- Mfr.Part #
- 2N5192
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A SOT32-3
- Stock
- 7,797
- In Stock ：
- 7,797
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2N5192
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1.4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Current Rating :
- 4A
- Surface Mount :
- No
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Height :
- 11.0998mm
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 1A, 4A
- Power Dissipation :
- 40W
- Width :
- 2.9972mm
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 80V
- Packaging :
- Bulk
- Length :
- 7.7978mm
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1.5A 2V
- Collector Emitter Breakdown Voltage :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Halogen Free :
- Halogen Free
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Transition Frequency :
- 2MHz
- Mounting Type :
- Through Hole
- Weight :
- 4.535924g
- Pbfree Code :
- yes
- hFE Min :
- 20
- Package / Case :
- TO-225AA, TO-126-3
- Frequency :
- 2MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 40W
- Gain Bandwidth Product :
- 2MHz
- Max Collector Current :
- 4A
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 1mA
- Published :
- 2000
- Factory Lead Time :
- 5 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Application :
- SWITCHING
- Datasheets
- 2N5192
2N5192 Documents
NPN -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2N5192G Overview
In this device, the DC current gain is 20 @ 1.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.4V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.4V @ 1A, 4A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).2MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2N5192G Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz
2N5192G Applications
There are a lot of ON Semiconductor
2N5192G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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