2N5192
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- Mfr.Part #
- 2N5192
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A SOT32-3
- Stock
- 7,797
- In Stock ：
- 7,797
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 80V
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Power Dissipation :
- 40W
- Weight :
- 4.535924g
- Length :
- 7.7978mm
- Collector Base Voltage (VCBO) :
- 80V
- Width :
- 2.9972mm
- Current - Collector Cutoff (Max) :
- 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1.5A 2V
- Published :
- 2000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 5 Weeks
- Current Rating :
- 4A
- Base Part Number :
- 2N5192
- Collector Emitter Saturation Voltage :
- 1.4V
- Frequency :
- 2MHz
- Gain Bandwidth Product :
- 2MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Packaging :
- Bulk
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 40W
- Height :
- 11.0998mm
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 1A, 4A
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 80V
- hFE Min :
- 20
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Transition Frequency :
- 2MHz
- Pin Count :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Surface Mount :
- No
- Max Collector Current :
- 4A
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Datasheets
- 2N5192
NPN -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2N5192G Overview
In this device, the DC current gain is 20 @ 1.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.4V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.4V @ 1A, 4A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).2MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2N5192G Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz
2N5192G Applications
There are a lot of ON Semiconductor
2N5192G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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