2N5192

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Published :

2000

Polarity/Channel Type :

NPN

Collector Base Voltage (VCBO) :

80V

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Terminations :

3

Width :

2.9972mm

hFE Min :

20

Mounting Type :

Through Hole

Surface Mount :

No

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

80V

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Frequency :

2MHz

Base Part Number :

2N5192

Length :

7.7978mm

Collector Emitter Saturation Voltage :

1.4V

Factory Lead Time :

5 Weeks

Max Collector Current :

4A

Gain Bandwidth Product :

2MHz

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1.5A 2V

Voltage - Rated DC :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Pbfree Code :

yes

Transition Frequency :

2MHz

Packaging :

Bulk

Operating Temperature :

-65°C~150°C TJ

Emitter Base Voltage (VEBO) :

5V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Collector Emitter Breakdown Voltage :

80V

Weight :

4.535924g

Current Rating :

4A

Current - Collector Cutoff (Max) :

1mA

Vce Saturation (Max) @ Ib, Ic :

1.4V @ 1A, 4A

Radiation Hardening :

No

Height :

11.0998mm

Transistor Type :

NPN

Package / Case :

TO-225AA, TO-126-3

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

40W

Number of Pins :

3

Max Power Dissipation :

40W