2N5191G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

40W

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

1mA

Packaging :

Bulk

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Through Hole

Weight :

4.535924g

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

2MHz

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

60V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Length :

31.75mm

Radiation Hardening :

No

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Base Part Number :

2N5191

Terminal Finish :

Tin (Sn)

Height :

6.35mm

hFE Min :

25

Transistor Type :

NPN

Width :

6.35mm

Package / Case :

TO-225AA, TO-126-3

Collector Emitter Saturation Voltage :

1.4V

Element Configuration :

Single

Number of Pins :

3

Collector Base Voltage (VCBO) :

60V

Max Collector Current :

4A

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

60V

JESD-609 Code :

e3

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 1.5A 2V

Frequency :

2MHz

REACH SVHC :

No SVHC

Gain Bandwidth Product :

2MHz

Current Rating :

4A

Vce Saturation (Max) @ Ib, Ic :

1.4V @ 1A, 4A

Halogen Free :

Halogen Free

Max Power Dissipation :

40W

Operating Temperature :

-65°C~150°C TJ

Voltage - Rated DC :

60V

Number of Terminations :

3

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Published :

2005

Factory Lead Time :

2 Weeks

ECCN Code :

EAR99

Surface Mount :

No