2N5191G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

Surface Mount :

No

Vce Saturation (Max) @ Ib, Ic :

1.4V @ 1A, 4A

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 1.5A 2V

Width :

6.35mm

Package / Case :

TO-225AA, TO-126-3

Current Rating :

4A

Power Dissipation :

40W

Max Power Dissipation :

40W

Element Configuration :

Single

Pbfree Code :

yes

Frequency :

2MHz

Factory Lead Time :

2 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Collector Emitter Saturation Voltage :

1.4V

Gain Bandwidth Product :

2MHz

Max Collector Current :

4A

REACH SVHC :

No SVHC

hFE Min :

25

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Halogen Free :

Halogen Free

Transistor Type :

NPN

Current - Collector Cutoff (Max) :

1mA

Weight :

4.535924g

Base Part Number :

2N5191

Operating Temperature :

-65°C~150°C TJ

Lead Free :

Lead Free

Length :

31.75mm

Emitter Base Voltage (VEBO) :

5V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Packaging :

Bulk

Pin Count :

3

Collector Emitter Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

ECCN Code :

EAR99

Number of Elements :

1

Transition Frequency :

2MHz

Transistor Element Material :

SILICON

Number of Terminations :

3

Collector Base Voltage (VCBO) :

60V

Height :

6.35mm

Collector Emitter Voltage (VCEO) :

60V

Voltage - Rated DC :

60V

Peak Reflow Temperature (Cel) :

260