2N5190G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Rated DC :

40V

Polarity/Channel Type :

NPN

Gain Bandwidth Product :

2MHz

Peak Reflow Temperature (Cel) :

260

Base Part Number :

2N5190

Max Power Dissipation :

40W

Pbfree Code :

yes

Published :

2000

Height :

6.35mm

Halogen Free :

Halogen Free

Collector Base Voltage (VCBO) :

40V

Mounting Type :

Through Hole

Operating Temperature :

-65°C~150°C TJ

Factory Lead Time :

2 Weeks

Frequency :

2MHz

Current Rating :

4A

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

40V

Length :

6.35mm

Packaging :

Bulk

Surface Mount :

No

ECCN Code :

EAR99

Number of Terminations :

3

Transistor Application :

SWITCHING

Max Collector Current :

4A

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 1.5A 2V

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

4.535924g

Width :

6.35mm

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

5V

Number of Elements :

1

Number of Pins :

3

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Collector Emitter Voltage (VCEO) :

40V

Transition Frequency :

2MHz

Current - Collector Cutoff (Max) :

1mA

Radiation Hardening :

No

hFE Min :

25

Power Dissipation :

40W

Transistor Type :

NPN

REACH SVHC :

No SVHC

Package / Case :

TO-225AA, TO-126-3

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

1.4V @ 1A, 4A

Pin Count :

3