2N5190G

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Mfr.Part #
2N5190G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 40V 4A TO126
Stock
9,966
In Stock :
9,966

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Bulk
Frequency :
2MHz
Surface Mount :
No
Factory Lead Time :
2 Weeks
Voltage - Rated DC :
40V
Pin Count :
3
Element Configuration :
Single
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
40
Number of Elements :
1
Width :
6.35mm
Base Part Number :
2N5190
Collector Base Voltage (VCBO) :
40V
Max Collector Current :
4A
Terminal Finish :
Tin (Sn)
ECCN Code :
EAR99
Max Power Dissipation :
40W
Collector Emitter Breakdown Voltage :
40V
Radiation Hardening :
No
Current Rating :
4A
Pbfree Code :
yes
Weight :
4.535924g
Mounting Type :
Through Hole
Height :
6.35mm
Published :
2000
Transistor Type :
NPN
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 1.5A 2V
Transition Frequency :
2MHz
hFE Min :
25
Current - Collector Cutoff (Max) :
1mA
Number of Pins :
3
Length :
6.35mm
Peak Reflow Temperature (Cel) :
260
Emitter Base Voltage (VEBO) :
5V
JESD-609 Code :
e3
Vce Saturation (Max) @ Ib, Ic :
1.4V @ 1A, 4A
Transistor Application :
SWITCHING
Polarity/Channel Type :
NPN
Gain Bandwidth Product :
2MHz
Lifecycle Status :
ACTIVE (Last Updated: 12 hours ago)
Collector Emitter Voltage (VCEO) :
40V
Lead Free :
Lead Free
Power Dissipation :
40W
Halogen Free :
Halogen Free
Operating Temperature :
-65°C~150°C TJ
Package / Case :
TO-225AA, TO-126-3
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N5190G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Base Part Number:2N5190, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-225AA, TO-126-3, 2N5190G pinout, 2N5190G datasheet PDF, 2N5190G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N5190G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N5190G


NPN -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

2N5190G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1.5A 2V.When VCE saturation is 1.4V @ 1A, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 2MHz.A maximum collector current of 4A volts can be achieved.

2N5190G Features


the DC current gain for this device is 25 @ 1.5A 2V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz


2N5190G Applications


There are a lot of ON Semiconductor
2N5190G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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