2N5190
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- Mfr.Part #
- 2N5190
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 4A TO126
- Stock
- 39,094
- In Stock ：
- 39,094
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Halogen Free :
- Halogen Free
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 2MHz
- Length :
- 6.35mm
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 40V
- Max Collector Current :
- 4A
- Power Dissipation :
- 40W
- Width :
- 6.35mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1.5A 2V
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Frequency :
- 2MHz
- Height :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 1A, 4A
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 1mA
- Factory Lead Time :
- 2 Weeks
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- hFE Min :
- 25
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 40V
- Number of Pins :
- 3
- Base Part Number :
- 2N5190
- Package / Case :
- TO-225AA, TO-126-3
- Transition Frequency :
- 2MHz
- Current Rating :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Published :
- 2000
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 40W
- Collector Emitter Voltage (VCEO) :
- 40V
- Lifecycle Status :
- ACTIVE (Last Updated: 12 hours ago)
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Voltage - Rated DC :
- 40V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Weight :
- 4.535924g
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- 2N5190
NPN -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2N5190G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1.5A 2V.When VCE saturation is 1.4V @ 1A, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 2MHz.A maximum collector current of 4A volts can be achieved.
2N5190G Features
the DC current gain for this device is 25 @ 1.5A 2V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz
2N5190G Applications
There are a lot of ON Semiconductor
2N5190G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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