2N5190
- Mfr.Part #
- 2N5190
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 4A TO126
- Stock
- 20,189
- In Stock :
- 20,189
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 12 hours ago)
- Factory Lead Time :
- 2 Weeks
- Width :
- 6.35mm
- Current Rating :
- 4A
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 40V
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 2MHz
- Gain Bandwidth Product :
- 2MHz
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Published :
- 2000
- Frequency :
- 2MHz
- Length :
- 6.35mm
- Number of Pins :
- 3
- Base Part Number :
- 2N5190
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Collector Current :
- 4A
- hFE Min :
- 25
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 40V
- Halogen Free :
- Halogen Free
- Collector Emitter Breakdown Voltage :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1.5A 2V
- Max Power Dissipation :
- 40W
- Height :
- 6.35mm
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 40W
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 1A, 4A
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Weight :
- 4.535924g
- Datasheets
- 2N5190
2N5190 Documents
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NPN -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2N5190G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1.5A 2V.When VCE saturation is 1.4V @ 1A, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 2MHz.A maximum collector current of 4A volts can be achieved.
2N5190G Features
the DC current gain for this device is 25 @ 1.5A 2V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz
2N5190G Applications
There are a lot of ON Semiconductor
2N5190G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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