2N5190
- Mfr.Part #
- 2N5190
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 4A TO126
- Stock
- 20,189
- In Stock :
- 20,189
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1.5A 2V
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 40V
- Frequency :
- 2MHz
- Mounting Type :
- Through Hole
- Published :
- 2000
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 1A, 4A
- Width :
- 6.35mm
- Gain Bandwidth Product :
- 2MHz
- Collector Emitter Breakdown Voltage :
- 40V
- Surface Mount :
- No
- Power Dissipation :
- 40W
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Bulk
- Transition Frequency :
- 2MHz
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Factory Lead Time :
- 2 Weeks
- Base Part Number :
- 2N5190
- Height :
- 6.35mm
- Voltage - Rated DC :
- 40V
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 40W
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 1mA
- Length :
- 6.35mm
- Collector Base Voltage (VCBO) :
- 40V
- Weight :
- 4.535924g
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -65°C~150°C TJ
- Halogen Free :
- Halogen Free
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 4A
- hFE Min :
- 25
- Lifecycle Status :
- ACTIVE (Last Updated: 12 hours ago)
- Current Rating :
- 4A
- Element Configuration :
- Single
- Datasheets
- 2N5190
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NPN -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2N5190G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1.5A 2V.When VCE saturation is 1.4V @ 1A, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 2MHz.A maximum collector current of 4A volts can be achieved.
2N5190G Features
the DC current gain for this device is 25 @ 1.5A 2V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz
2N5190G Applications
There are a lot of ON Semiconductor
2N5190G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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