2N5157

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Supplier Device Package :

TO-3

Power - Max :

5 W

Min Operating Temperature :

-65 °C

Terminal Position :

BOTTOM

Pin Count :

2

Power Dissipation :

5 W

Emitter Base Voltage (VEBO) :

5 V

RoHS :

Compliant

Max Operating Temperature :

200 °C

Package Shape :

Round

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 700mA, 3.5A

Operating Temperature :

-65°C ~ 200°C (TJ)

Lifecycle Status :

Production (Last Updated: 2 months ago)

Current - Collector (Ic) (Max) :

250 µA

Subcategory :

Other Transistors

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Number of Terminals :

2

Polarity :

NPN

JESD-609 Code :

e0

JEDEC-95 Code :

TO-3

Configuration :

Single

Radiation Hardening :

No

Terminal Finish :

Tin/Lead (Sn/Pb)

Series :

-

Current - Collector Cutoff (Max) :

250μA

Pbfree Code :

No

Collector Current-Max (IC) :

3.5 A

Manufacturer :

Microsemi Corporation

Case Connection :

COLLECTOR

Package :

Bulk

Packaging :

Bulk

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Product Status :

Active

Collector Emitter Voltage (VCEO) :

500 V

Reference Standard :

MIL-19500/371

Frequency - Transition :

-

JESD-30 Code :

O-MBFM-P2

Number of Pins :

3

Mount :

Through Hole

Terminal Form :

PIN/PEG

Qualification Status :

Not Qualified

Polarity/Channel Type :

NPN

Package / Case :

TO-204AA, TO-3

DC Current Gain-Min (hFE) :

30

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

500 V

Max Collector Current :

3.5 A

Schedule B :

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

Max Power Dissipation :

5 W

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 1A, 5V

Collector-Emitter Voltage-Max :

500 V

Mounting Type :

Through Hole

Transistor Type :

NPN

Power Dissipation-Max (Abs) :

100 W

Collector Base Voltage (VCBO) :

700 V