2N5089RLRAG
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- Mfr.Part #
- 2N5089RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.05A TO92
- Stock
- 15,684
- In Stock ：
- 15,684
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 50mA
- Max Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 30V
- Reach Compliance Code :
- Unknown
- Base Part Number :
- 2N5089
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 100μA 5V
- Collector Emitter Saturation Voltage :
- 500mV
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Lead Free :
- Lead Free
- HTS Code :
- 8541.21.00.95
- Published :
- 2006
- Transition Frequency :
- 50MHz
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 3V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 25V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- LOW NOISE
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 500mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Gain Bandwidth Product :
- 50MHz
- JESD-30 Code :
- O-PBCY-T3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 400
- Current Rating :
- 50mA
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 25V
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- NPN
- Datasheets
- 2N5089RLRAG
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5089RLRAG Overview
This device has a DC current gain of 400 @ 100μA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 3V.This device has a current rating of 50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A maximum collector current of 50mA volts is possible.
2N5089RLRAG Features
the DC current gain for this device is 400 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 50MHz
2N5089RLRAG Applications
There are a lot of ON Semiconductor
2N5089RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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