2N5089RLRA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mount :

Through Hole

Number of Elements :

1

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Published :

2006

Max Power Dissipation :

625mW

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Application :

AMPLIFIER

Collector Emitter Saturation Voltage :

500mV

Base Part Number :

2N5089

Mounting Type :

Through Hole

JESD-609 Code :

e0

Collector Base Voltage (VCBO) :

30V

JESD-30 Code :

O-PBCY-T3

Collector Emitter Breakdown Voltage :

25V

Lead Free :

Contains Lead

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

500mV

Transistor Type :

NPN

Voltage - Rated DC :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

50MHz

Terminal Position :

BOTTOM

HTS Code :

8541.21.00.95

Additional Feature :

LOW NOISE

Reach Compliance Code :

not_compliant

Gain Bandwidth Product :

50MHz

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

240

Packaging :

Tape and Reel (TR)

Pin Count :

3

Current - Collector Cutoff (Max) :

50nA ICBO

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

Number of Terminations :

3

Max Collector Current :

50mA

Current Rating :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

400 @ 100μA 5V

Emitter Base Voltage (VEBO) :

3V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Element Material :

SILICON

hFE Min :

400

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30