2N5089_J18Z
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- Mfr.Part #
- 2N5089_J18Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.1A TO92-3
- Stock
- 8,151
- In Stock ：
- 8,151
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 100mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 100μA 5V
- Frequency - Transition :
- 50MHz
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Base Part Number :
- 2N5089
- Power - Max :
- 625mW
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Datasheets
- 2N5089_J18Z
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N5089_J18Z Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 400 @ 100μA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N5089_J18Z Features
the DC current gain for this device is 400 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
2N5089_J18Z Applications
There are a lot of ON Semiconductor
2N5089_J18Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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