2N5088TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

30V

Weight :

240mg

Published :

2001

Voltage - Rated DC :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Transition Frequency :

50MHz

Number of Elements :

1

Number of Pins :

3

Collector Base Voltage (VCBO) :

35V

Factory Lead Time :

6 Weeks

Max Breakdown Voltage :

30V

Current Rating :

100mA

Width :

4.19mm

Max Collector Current :

100mA

JESD-609 Code :

e3

Transistor Type :

NPN

Base Part Number :

2N5088

Radiation Hardening :

No

Number of Terminations :

3

Transistor Application :

AMPLIFIER

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

4.5V

Length :

5.2mm

Collector Emitter Breakdown Voltage :

30V

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100μA 5V

Frequency :

50MHz

Pbfree Code :

yes

Max Power Dissipation :

625mW

Polarity/Channel Type :

NPN

Terminal Position :

BOTTOM

Gain Bandwidth Product :

50MHz

Current - Collector Cutoff (Max) :

50nA ICBO

Packaging :

Tape and Box (TB)

Height :

5.33mm

Collector Emitter Saturation Voltage :

500mV

Mounting Type :

Through Hole

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

Mount :

Through Hole

Element Configuration :

Single

Power Dissipation :

625mW

Transistor Element Material :

SILICON

Lead Free :

Lead Free

hFE Min :

300

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)