2N5088RLRAG
- Mfr.Part #
- 2N5088RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.05A TO92
- Stock
- 21,922
- In Stock :
- 21,922
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Qualification Status :
- COMMERCIAL
- Pin Count :
- 3
- Surface Mount :
- No
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Frequency - Transition :
- 50MHz
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 625mW
- Configuration :
- Single
- Terminal Position :
- BOTTOM
- Current - Collector (Ic) (Max) :
- 50mA
- Pbfree Code :
- yes
- Additional Feature :
- LOW NOISE
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Reach Compliance Code :
- Unknown
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100μA 5V
- Terminal Finish :
- TIN SILVER COPPER
- Transition Frequency :
- 50MHz
- JESD-30 Code :
- O-PBCY-T3
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Datasheets
- 2N5088RLRAG

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5088RLRAG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 100μA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 1mA, 10mA.The part has a transition frequency of 50MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).
2N5088RLRAG Features
the DC current gain for this device is 300 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
a transition frequency of 50MHz
2N5088RLRAG Applications
There are a lot of Rochester Electronics, LLC
2N5088RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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