2N5088BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

100mA

Terminal Finish :

Tin (Sn)

Terminal Position :

BOTTOM

REACH SVHC :

No SVHC

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Max Power Dissipation :

625mW

Transistor Application :

AMPLIFIER

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Saturation Voltage :

500mV

Power Dissipation :

625mW

Gain Bandwidth Product :

50MHz

Collector Emitter Breakdown Voltage :

30V

Base Part Number :

2N5088

Length :

5.2mm

Frequency :

50MHz

Packaging :

Bulk

Polarity/Channel Type :

NPN

Height :

5.33mm

Mounting Type :

Through Hole

Emitter Base Voltage (VEBO) :

4.5V

ECCN Code :

EAR99

Weight :

179mg

Transistor Type :

NPN

JESD-609 Code :

e3

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

Transition Frequency :

50MHz

Collector Base Voltage (VCBO) :

35V

Radiation Hardening :

No

Pbfree Code :

yes

Number of Pins :

3

hFE Min :

300

Published :

2001

Mount :

Through Hole

Collector Emitter Voltage (VCEO) :

30V

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

50nA ICBO

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Voltage - Rated DC :

30V

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100μA 5V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Number of Terminations :

3

Transistor Element Material :

SILICON

Width :

4.19mm