2N4449UB

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Mfr.Part #
2N4449UB
Manufacturer
Microchip Technology
Package / Case
Datasheet
Download
Description
TRANS NPN 20V UB
Stock
13,295
In Stock :
13,295

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Turn Off Time-Max (toff) :
18ns
Lifecycle Status :
IN PRODUCTION (Last Updated: 3 weeks ago)
Polarity/Channel Type :
NPN
Supplier Device Package :
UB
Turn On Time-Max (ton) :
12ns
Series :
Military, MIL-PRF-19500/317
HTS Code :
8541.21.00.95
JESD-609 Code :
e0
Packaging :
Bulk
Max Power Dissipation :
400mW
Operating Temperature :
-65°C~200°C TJ
Transistor Element Material :
SILICON
Factory Lead Time :
18 Weeks
Pin Count :
3
Collector Emitter Voltage (VCEO) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Mount :
Surface Mount
Published :
2002
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 100mA 1V
Pbfree Code :
No
Power - Max :
360mW
Number of Terminations :
3
RoHS Status :
Non-RoHS Compliant
Current - Collector Cutoff (Max) :
400nA
Radiation Hardening :
No
Number of Elements :
1
Configuration :
Single
Mounting Type :
Surface Mount
Terminal Position :
Dual
Collector Base Voltage (VCBO) :
40V
Vce Saturation (Max) @ Ib, Ic :
450mV @ 10mA, 100mA
Transistor Application :
SWITCHING
Transistor Type :
NPN
Terminal Finish :
TIN LEAD
Datasheets
2N4449UB
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N4449UB from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~200°C TJ, Number of Pins:3, Number of Terminations:3, Mounting Type:Surface Mount, 2N4449UB pinout, 2N4449UB datasheet PDF, 2N4449UB amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N4449UB ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 400nA 1 Elements 3 Terminations SILICON NPN Bulk Surface Mount

2N4449UB Overview


DC current gain in this device equals 20 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 450mV @ 10mA, 100mA.Product comes in UB supplier package.

2N4449UB Features


the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the supplier device package of UB


2N4449UB Applications


There are a lot of Microsemi Corporation
2N4449UB applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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