2N4403TFR
- Mfr.Part #
- 2N4403TFR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.6A TO92-3
- Stock
- 18,226
- In Stock :
- 18,226
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -600mA
- Transistor Element Material :
- SILICON
- Length :
- 5.2mm
- Radiation Hardening :
- No
- Polarity :
- PNP, NPN
- Gain Bandwidth Product :
- 200MHz
- Collector Emitter Voltage (VCEO) :
- 40V
- Transition Frequency :
- 200MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Height :
- 5.33mm
- Mounting Type :
- Through Hole
- Base Part Number :
- 2N4403
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Collector Emitter Saturation Voltage :
- 750mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- hFE Min :
- 100
- REACH SVHC :
- No SVHC
- Width :
- 4.19mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Collector Current :
- 600mA
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- Weight :
- 240mg
- Terminal Finish :
- Tin (Sn)
- Turn Off Time-Max (toff) :
- 255ns
- Factory Lead Time :
- 6 Weeks
- Number of Pins :
- 3
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 40V
- Frequency :
- 200MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- -40V
- Power Dissipation :
- 625mW
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 40V
- Published :
- 2007
- Number of Terminations :
- 3
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -40V
- Datasheets
- 2N4403TFR

PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N4403TFR Overview
DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 750mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 50mA, 500mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -600mA current rating.As a result, the part has a transition frequency of 200MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.
2N4403TFR Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
2N4403TFR Applications
There are a lot of ON Semiconductor
2N4403TFR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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