2N4403TF
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- Mfr.Part #
- 2N4403TF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.6A TO92-3
- Stock
- 2,014
- In Stock ：
- 2,014
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Emitter Base Voltage (VEBO) :
- -5V
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 200MHz
- Mount :
- Through Hole
- Element Configuration :
- Single
- Width :
- 4.19mm
- Voltage - Rated DC :
- -40V
- Length :
- 5.2mm
- Max Collector Current :
- 600mA
- Base Part Number :
- 2N4403
- Published :
- 2007
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Transition Frequency :
- 200MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Emitter Voltage (VCEO) :
- 40V
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 200MHz
- Collector Emitter Saturation Voltage :
- 750mV
- Pbfree Code :
- yes
- Turn Off Time-Max (toff) :
- 255ns
- Max Power Dissipation :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Height :
- 5.33mm
- Power Dissipation :
- 625mW
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 240mg
- Collector Base Voltage (VCBO) :
- -40V
- Transistor Element Material :
- SILICON
- hFE Min :
- 100
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 40V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current Rating :
- -600mA
- Max Breakdown Voltage :
- 40V
- Factory Lead Time :
- 6 Weeks
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Datasheets
- 2N4403TF
2N4403TF Documents
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N4403TF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 750mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 600mA volts.
2N4403TF Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
2N4403TF Applications
There are a lot of ON Semiconductor
2N4403TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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