2N4403TF
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- Mfr.Part #
- 2N4403TF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.6A TO92-3
- Stock
- 2,014
- In Stock ：
- 2,014
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 600mA
- Collector Emitter Saturation Voltage :
- 750mV
- Power Dissipation :
- 625mW
- Max Breakdown Voltage :
- 40V
- Length :
- 5.2mm
- Weight :
- 240mg
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 200MHz
- Base Part Number :
- 2N4403
- Height :
- 5.33mm
- Turn Off Time-Max (toff) :
- 255ns
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Published :
- 2007
- Collector Emitter Voltage (VCEO) :
- 40V
- Lead Free :
- Lead Free
- hFE Min :
- 100
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 200MHz
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Frequency :
- 200MHz
- Collector Base Voltage (VCBO) :
- -40V
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 625mW
- Collector Emitter Breakdown Voltage :
- 40V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current Rating :
- -600mA
- Emitter Base Voltage (VEBO) :
- -5V
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Width :
- 4.19mm
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Voltage - Rated DC :
- -40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2N4403TF
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N4403TF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 750mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 600mA volts.
2N4403TF Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
2N4403TF Applications
There are a lot of ON Semiconductor
2N4403TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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