2N4403TAR

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

40V

Collector Emitter Voltage (VCEO) :

40V

Terminal Position :

BOTTOM

Length :

5.2mm

Max Breakdown Voltage :

40V

Weight :

240mg

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Emitter Base Voltage (VEBO) :

-5V

Frequency :

200MHz

Operating Temperature :

-55°C~150°C TJ

hFE Min :

100

Transistor Application :

SWITCHING

Radiation Hardening :

No

Turn Off Time-Max (toff) :

255ns

Element Configuration :

Single

Mounting Type :

Through Hole

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

750mV

Power Dissipation :

625mW

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gain Bandwidth Product :

200MHz

Width :

4.19mm

Base Part Number :

2N4403

Transistor Type :

PNP

Transition Frequency :

200MHz

Max Power Dissipation :

625mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Height :

5.33mm

ECCN Code :

EAR99

Factory Lead Time :

6 Weeks

Terminal Finish :

Tin (Sn)

Collector Base Voltage (VCBO) :

-40V

Mount :

Through Hole

Packaging :

Tape and Box (TB)

Pbfree Code :

yes

Polarity/Channel Type :

PNP

Max Collector Current :

600mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Voltage - Rated DC :

-40V

Current Rating :

-600mA

Published :

2007

Transistor Element Material :

SILICON

Lead Free :

Lead Free