2N4403TAR
- Mfr.Part #
- 2N4403TAR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.6A TO92-3
- Stock
- 13,677
- In Stock :
- 13,677
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -600mA
- Max Breakdown Voltage :
- 40V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 40V
- Emitter Base Voltage (VEBO) :
- -5V
- Base Part Number :
- 2N4403
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- -40V
- Length :
- 5.2mm
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -40V
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 750mV
- Packaging :
- Tape and Box (TB)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Transition Frequency :
- 200MHz
- Collector Emitter Voltage (VCEO) :
- 40V
- Power Dissipation :
- 625mW
- Weight :
- 240mg
- hFE Min :
- 100
- Factory Lead Time :
- 6 Weeks
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Published :
- 2007
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Turn Off Time-Max (toff) :
- 255ns
- Number of Terminations :
- 3
- Height :
- 5.33mm
- Max Collector Current :
- 600mA
- Mount :
- Through Hole
- Number of Elements :
- 1
- Frequency :
- 200MHz
- Gain Bandwidth Product :
- 200MHz
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Mounting Type :
- Through Hole
- Width :
- 4.19mm
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Datasheets
- 2N4403TAR
2N4403TAR Documents

PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4403TAR Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 750mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).200MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
2N4403TAR Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
2N4403TAR Applications
There are a lot of ON Semiconductor
2N4403TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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