2N4403TA
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- Mfr.Part #
- 2N4403TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- SMALL SIGNAL BIPOLAR TRANSISTOR,
- Stock
- 1,017
- In Stock ：
- 1,017
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Emitter Saturation Voltage :
- 750mV
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Frequency :
- 200MHz
- Pbfree Code :
- yes
- Base Part Number :
- 2N4403
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Transition Frequency :
- 200MHz
- hFE Min :
- 100
- Lead Free :
- Lead Free
- Width :
- 4.19mm
- Max Collector Current :
- 600mA
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Collector Base Voltage (VCBO) :
- -40V
- Packaging :
- Tape and Box (TB)
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 40V
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 625mW
- Height :
- 5.33mm
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- -5V
- Weight :
- 240mg
- Published :
- 2007
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Turn Off Time-Max (toff) :
- 255ns
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 200MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 40V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Voltage - Rated DC :
- -40V
- Current Rating :
- -600mA
- Polarity/Channel Type :
- PNP
- Length :
- 5.2mm
- Datasheets
- 2N4403TA
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4403TAR Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 750mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).200MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
2N4403TAR Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
2N4403TAR Applications
There are a lot of ON Semiconductor
2N4403TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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