2N4403T93
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- Mfr.Part #
- 2N4403T93
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.6A TO92
- Stock
- 36,726
- In Stock ：
- 36,726
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Transition Frequency :
- 200MHz
- Collector Base Voltage (VCBO) :
- -40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Pin Count :
- 3
- Current Rating :
- -600mA
- Number of Terminations :
- 3
- hFE Min :
- 20
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Collector-Base Capacitance-Max :
- 8.5pF
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Position :
- BOTTOM
- Base Part Number :
- 2N4403
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e3/e2
- Packaging :
- Tape and Box (TB)
- Max Collector Current :
- 600mA
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 600mA
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- TIN/TIN COPPER
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- HTS Code :
- 8541.21.00.75
- VCEsat-Max :
- 0.75 V
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- O-PBCY-T3
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- -40V
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 200MHz
- Transistor Element Material :
- SILICON
- Published :
- 2005
- Turn Off Time-Max (toff) :
- 255ns
- Emitter Base Voltage (VEBO) :
- -6V
- Collector Emitter Voltage (VCEO) :
- 750mV
- Lead Free :
- Lead Free
- Turn On Time-Max (ton) :
- 35ns
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheets
- 2N4403T93
2N4403T93 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4403T93 Overview
In this device, the DC current gain is 100 @ 150mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 50mA, 500mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).200MHz is present in the transition frequency.Maximum collector currents can be below 600mA volts.
2N4403T93 Features
the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -600mA
a transition frequency of 200MHz
2N4403T93 Applications
There are a lot of ROHM Semiconductor
2N4403T93 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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