2N4403T93

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 1V

Time@Peak Reflow Temperature-Max (s) :

10

Mounting Type :

Through Hole

Pin Count :

3

Collector Emitter Voltage (VCEO) :

750mV

Collector Emitter Breakdown Voltage :

40V

HTS Code :

8541.21.00.75

Terminal Finish :

TIN/TIN COPPER

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

VCEsat-Max :

0.75 V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Box (TB)

Terminal Position :

BOTTOM

Polarity/Channel Type :

PNP

Max Collector Current :

600mA

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

-6V

Turn Off Time-Max (toff) :

255ns

Qualification Status :

Not Qualified

Number of Elements :

1

Voltage - Rated DC :

-40V

Collector-Base Capacitance-Max :

8.5pF

hFE Min :

20

Peak Reflow Temperature (Cel) :

260

Base Part Number :

2N4403

Turn On Time-Max (ton) :

35ns

JESD-609 Code :

e3/e2

Operating Temperature :

150°C TJ

Mount :

Through Hole

Current Rating :

-600mA

Gain Bandwidth Product :

200MHz

Transistor Element Material :

SILICON

JESD-30 Code :

O-PBCY-T3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Application :

SWITCHING

Max Power Dissipation :

625mW

Current - Collector (Ic) (Max) :

600mA

Published :

2005

Collector Base Voltage (VCBO) :

-40V

Lead Free :

Lead Free

Transition Frequency :

200MHz

Transistor Type :

PNP