2N4403G
- Mfr.Part #
- 2N4403G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.6A TO92
- Stock
- 71,732
- In Stock :
- 71,732
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2N4403
- Pin Count :
- 3
- Type :
- GENERAL PURPOSE
- Max Collector Current :
- 600mA
- Frequency :
- 200MHz
- Voltage - Rated DC :
- -40V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- hFE Min :
- 30
- Max Power Dissipation :
- 625mW
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 200MHz
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Published :
- 2007
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- Transition Frequency :
- 200MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn Off Time-Max (toff) :
- 255ns
- Number of Terminations :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 40V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Collector Emitter Saturation Voltage :
- 750mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Elements :
- 1
- Current Rating :
- -600mA
- JESD-609 Code :
- e1
- Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- 2N4403G
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N4403G Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 750mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -600mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
2N4403G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz
2N4403G Applications
There are a lot of ON Semiconductor
2N4403G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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