2N4403BU
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- Mfr.Part #
- 2N4403BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.6A TO92-3
- Stock
- 17,208
- In Stock ：
- 17,208
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 200MHz
- Packaging :
- Bulk
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Base Part Number :
- 2N4403
- Max Power Dissipation :
- 625mW
- Voltage - Rated DC :
- -40V
- Width :
- 4.19mm
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 40V
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Element Configuration :
- Single
- Transition Frequency :
- 200MHz
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 5.33mm
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Current Rating :
- -600mA
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- -40V
- Weight :
- 179mg
- Length :
- 5.2mm
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Frequency :
- 200MHz
- hFE Min :
- 100
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- -5V
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Turn Off Time-Max (toff) :
- 255ns
- Collector Emitter Saturation Voltage :
- 750mV
- Terminal Position :
- BOTTOM
- Published :
- 2007
- Number of Terminations :
- 3
- Power Dissipation :
- 625mW
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 40V
- Factory Lead Time :
- 6 Weeks
- Max Collector Current :
- 600mA
- Datasheets
- 2N4403BU
2N4403BU Documents
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N4403BU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
2N4403BU Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
2N4403BU Applications
There are a lot of ON Semiconductor
2N4403BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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