2N4401TFR

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

60V

Weight :

240mg

Transistor Type :

NPN

Power Dissipation :

625mW

Max Collector Current :

600mA

Mount :

Through Hole

Emitter Base Voltage (VEBO) :

6V

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 1V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

6 Weeks

Collector Emitter Voltage (VCEO) :

40V

Number of Elements :

1

ECCN Code :

EAR99

Max Power Dissipation :

625mW

Width :

6.35mm

Radiation Hardening :

No

Element Configuration :

Single

JESD-609 Code :

e3

Terminal Position :

BOTTOM

Number of Pins :

3

Height :

6.35mm

Pbfree Code :

yes

Transistor Application :

SWITCHING

Max Breakdown Voltage :

40V

Number of Terminations :

3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Contact Plating :

Tin

Base Part Number :

2N4401

Gain Bandwidth Product :

250MHz

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

750mV

Polarity/Channel Type :

NPN

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Collector Emitter Breakdown Voltage :

40V

Voltage - Rated DC :

40V

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

Turn Off Time-Max (toff) :

255ns

Mounting Type :

Through Hole

hFE Min :

100

Length :

6.35mm

Transition Frequency :

250MHz

Frequency :

250MHz

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current Rating :

600mA

Published :

2007