2N4401TF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Weight :

240mg

Collector Emitter Voltage (VCEO) :

40V

Gain Bandwidth Product :

250MHz

Width :

6.35mm

Factory Lead Time :

6 Weeks

Height :

6.35mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

600mA

Transistor Application :

SWITCHING

Base Part Number :

2N4401

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

40V

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

Power Dissipation :

625mW

Published :

2007

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

ECCN Code :

EAR99

Current Rating :

600mA

Radiation Hardening :

No

Number of Elements :

1

Terminal Position :

BOTTOM

Frequency :

250MHz

Voltage - Rated DC :

40V

REACH SVHC :

No SVHC

Polarity/Channel Type :

NPN

Mounting Type :

Through Hole

Number of Terminations :

3

Length :

6.35mm

Collector Emitter Saturation Voltage :

750mV

Transistor Type :

NPN

Mount :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 1V

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

6V

Collector Base Voltage (VCBO) :

60V

JESD-609 Code :

e3

Turn Off Time-Max (toff) :

255ns

hFE Min :

100

Lead Free :

Lead Free

Number of Pins :

3

Max Power Dissipation :

625mW

Max Breakdown Voltage :

40V

Transition Frequency :

250MHz

Operating Temperature :

-55°C~150°C TJ