2N4401TAR
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- Mfr.Part #
- 2N4401TAR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 201,302
- In Stock ：
- 201,302
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 40V
- Height :
- 5.33mm
- Number of Pins :
- 3
- Max Collector Current :
- 600mA
- Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Box (TB)
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Base Part Number :
- 2N4401
- Frequency :
- 250MHz
- Element Configuration :
- Single
- Length :
- 5.2mm
- Max Power Dissipation :
- 625mW
- Collector Emitter Breakdown Voltage :
- 40V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 250MHz
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 750mV
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 600mA
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Collector Base Voltage (VCBO) :
- 60V
- Width :
- 4.19mm
- Voltage - Rated DC :
- 40V
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 250MHz
- hFE Min :
- 100
- Published :
- 2001
- Factory Lead Time :
- 23 Weeks
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 40V
- Weight :
- 240mg
- Datasheets
- 2N4401TAR
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4401TAR Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 1V.With a collector emitter saturation voltage of 750mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
2N4401TAR Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
2N4401TAR Applications
There are a lot of ON Semiconductor
2N4401TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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