2N4401TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 1V

Element Configuration :

Single

Max Power Dissipation :

625mW

Voltage - Rated DC :

40V

Frequency :

250MHz

Collector Emitter Saturation Voltage :

750mV

Transistor Type :

NPN

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

Number of Elements :

1

Packaging :

Tape and Box (TB)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Transition Frequency :

250MHz

Max Collector Current :

600mA

Terminal Position :

BOTTOM

Polarity/Channel Type :

NPN

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Pins :

3

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

40V

Collector Emitter Breakdown Voltage :

40V

ECCN Code :

EAR99

JESD-609 Code :

e3

Power Dissipation :

625mW

Max Breakdown Voltage :

40V

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Length :

5.2mm

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Width :

4.19mm

hFE Min :

100

Factory Lead Time :

6 Weeks

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

6V

Base Part Number :

2N4401

Current Rating :

600mA

Height :

5.33mm

Pbfree Code :

yes

Published :

2007

Collector Base Voltage (VCBO) :

60V

Turn Off Time-Max (toff) :

255ns

Gain Bandwidth Product :

250MHz

Radiation Hardening :

No

Lead Free :

Lead Free

Mount :

Through Hole

Weight :

240mg

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ