2N4401T93
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- Mfr.Part #
- 2N4401T93
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92
- Stock
- 11,505
- In Stock ：
- 11,505
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 60V
- JESD-30 Code :
- O-PBCY-T3
- Lead Free :
- Lead Free
- Turn On Time-Max (ton) :
- 35ns
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Elements :
- 1
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 250MHz
- Transistor Type :
- NPN
- Published :
- 2005
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 625mW
- Turn Off Time-Max (toff) :
- 255ns
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8541.21.00.75
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 250MHz
- Collector Emitter Breakdown Voltage :
- 40V
- hFE Min :
- 20
- Element Configuration :
- Single
- Voltage - Rated DC :
- 40V
- Terminal Finish :
- TIN/TIN COPPER
- Emitter Base Voltage (VEBO) :
- 6V
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Base Part Number :
- 2N4401
- VCEsat-Max :
- 0.75 V
- JESD-609 Code :
- e3/e2
- Packaging :
- Tape and Box (TB)
- Pin Count :
- 3
- Current Rating :
- 600mA
- Max Collector Current :
- 600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 750mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Collector-Base Capacitance-Max :
- 6.5pF
- Number of Terminations :
- 3
- Datasheets
- 2N4401T93
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4401T93 Overview
This device has a DC current gain of 100 @ 150mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 750mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 250MHz.A maximum collector current of 600mA volts is possible.
2N4401T93 Features
the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
2N4401T93 Applications
There are a lot of ROHM Semiconductor
2N4401T93 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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