2N4401RLRMG
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- Mfr.Part #
- 2N4401RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92
- Stock
- 19,450
- In Stock ：
- 19,450
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- hFE Min :
- 20
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 40V
- Base Part Number :
- 2N4401
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 250MHz
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Element Configuration :
- Single
- Turn Off Time-Max (toff) :
- 255ns
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 250MHz
- Collector Base Voltage (VCBO) :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 600mA
- Collector Emitter Saturation Voltage :
- 750mV
- Reach Compliance Code :
- Unknown
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 750mV
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- No
- Published :
- 2007
- Collector Emitter Breakdown Voltage :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Packaging :
- Tape and Box (TB)
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 625mW
- Current Rating :
- 600mA
- HTS Code :
- 8541.21.00.75
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- 2N4401RLRMG
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4401RLRMG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 750mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.During maximum operation, collector current can be as low as 600mA volts.
2N4401RLRMG Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
2N4401RLRMG Applications
There are a lot of ON Semiconductor
2N4401RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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